Energy Material Advances / 2021 / Article / Fig 4

Research Article

Graphene Quantum Dots Open Up New Prospects for Interfacial Modifying in Graphene/Silicon Schottky Barrier Solar Cell

Figure 4

The schematic energy band diagrams of a graphene-silicon MIS Schottky junction with increasing GOQD interlayer barrier thickness (a) 12 nm, (b) 26 nm, and (c) 40 nm, and the relative abundance of holes and electrons in each case is represented by the number of circles filled by a positive and negative sign. The corresponding characteristic curve measured by the experiment is shown below.