In Situ Observation of Crystalline Silicon Growth from SiO2 at Atomic Scale
Formation of Si nanocrystals at different doses and temperatures under 80 keV electron irradiation. (a–d) Crystalline Si NP growth process as the dose increased at 25°C. The Si (111) lattice can be clearly seen in (d). (e) EELS of Si edge at 25°C under different doses. (f–h) Formation of c-Si NPs at 200°C, 400°C, and 600°C with the corresponding dose. The unit of the dose is 106 C m-2.