Research / 2019 / Article / Fig 2

Research Article

In Situ Observation of Crystalline Silicon Growth from SiO2 at Atomic Scale

Figure 2

Formation of Si nanocrystals at different doses and temperatures under 80 keV electron irradiation. (a–d) Crystalline Si NP growth process as the dose increased at 25°C. The Si (111) lattice can be clearly seen in (d). (e) EELS of Si edge at 25°C under different doses. (f–h) Formation of c-Si NPs at 200°C, 400°C, and 600°C with the corresponding dose. The unit of the dose is 106 C m-2.