Research / 2019 / Article / Fig 4

Research Article

In Situ Observation of Crystalline Silicon Growth from SiO2 at Atomic Scale

Figure 4

Equivalent diameter distribution and schematic diagram of the growth process of c-Si NPs. (a, b) Si NP size under 300 keV and 80 keV electron beam irradiation at 600°C. (c–g) Atomic models of the c-Si NP growth process. (a) The initial amorphous SiO2, (b) formation of amorphous SiO NPs under electron irradiation, (c) nucleation of crystalline Si in SiO NPs under further irradiation, and (d) complete transformation into c-Si NPs. (g) Details of the nucleation of c-Si from SiO NP.