Research / 2019 / Article / Fig 1

Research Article

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Figure 1

Experimental design and results of the dynamic black phosphorus/Si generator. (a) Schematic illustration of the dynamic black phosphorus/Si generator. Inset: the lattice of black phosphorus. (b) The structure of the black phosphorus/Si generator. (c) - curve of the static black phosphorus/Si junction with an 8.0 N force. The contact area is 0.05 mm2. Inset: the circuit diagram of the static black phosphorus/Si junction. (d) of the dynamic black phosphorus/Si generator under the linearly reciprocating mode with an 8.0 N force and a speed of 8.0 cm/s. (e) and of the dynamic black phosphorus/Si generator with different moving speeds and an 8.0 N force exerted on the junction. (f) and of the dynamic black phosphorus/Si generator with different forces exerted and a speed of 8.0 cm/s.