Research / 2019 / Article / Fig 2

Research Article

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Figure 2

The physical mechanism of the dynamic heterojunction generator. (a) Schematic diagram of the dynamic black phosphorus/Si generator. (b) - curve of the dynamic black phosphorus/Si junction with an 8.0 N force. The threshold voltage is larger than 1.0 V. (c) of the dynamic black phosphorus/Si generator under the circularly rotating mode with an 8 N force and a speed of 8.0 cm/s. (d) Band diagram of the dynamic black phosphorus/Si generator. (e) The unique intrinsic anisotropy of black phosphorus arising from the lattice structure. (f) Voltage and current output of the dynamic black phosphorus/Si generator with a different Si substrate resistivity.