Research / 2020 / Article / Fig 3

Review Article

Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications

Figure 3

(a) Scheme of nonlocal measurement applied in a MnPS3 device. (b) Scheme of long-distance magnon transport of MnPS3. (c) Magnon relaxation distance vs. crystal thickness in quasi-2D MnPS3 at 2, 5, and 10 K. (d) Magnetoresistance behavior of 20 nm (Ga,Mn)As in the presence of an out-of-plane magnetic field under various temperatures. (e–j) Device configuration (e, g, and i) and transport results (f, h, and j) of Cr2Ge2Te6 field-effect transistor devices by using SiO2, ionic liquid, and boron nitride as dielectric layer, respectively. (k–m) Transfer characteristics of the field-effect transistors based on ~7 nm CrI3 at room temperature (k), ~7 nm CrSiTe3 in the temperature of 295 K down to 6 K (l), and~6.5 nm NiPS3 at 298 K (m). Panels (a–c) are reproduced with permission from ref. [36], copyright 2019 Physical Review X. Panel (d) is reproduced with permission from ref. [37], copyright 2019 Advanced Electronic Materials. Panels (e–j) are reproduced with permission from ref. [38], copyright 2018 Nature Nanotechnology. Panel (k) is reproduced with permission from ref. [39], copyright 2017 Nature Communications. Panel (l) is reproduced with permission from ref. [40], copyright 2016 Journal of Materials Chemistry C. Panel (m) is reproduced with permission from ref. [41], copyright 2018 Scientific Reports.