High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective
(a) at RT versus Bi alloying content for the Mg3+δSb2-xBix system. The data are taken from Refs. [33, 47, 67, 68, 89]; the dashed line is modeled only considering the mass fluctuation-induced point defect scattering of phonons. (b) Schematic illustration of the hybridization in Mg3X2 and the evolution of band structure, inspired by the work of Zhang et al. and Pan et al. [48, 99]. These energies of valence atomic orbitals are taken from the Periodic Table of Atomic Orbital Energies . (c) The density of states (DOS) effective mass and weighted mobility versus Bi content. The data are taken from Refs. [33, 47, 89]. (d) Temperature dependence of for the Mg3+δSb2-xBix system with different Bi contents. The data are taken from Refs. [47, 89]. (e) Schematic carrier concentration dependence of for Mg3Sb2-xBix using the SPB model [164, 165]. (f) The experimentally obtained maximum Hall carrier concentration and the corresponding doping efficiency versus Bi content for the Mg3+δSb2-xBix system. The purple dashed line indicates the estimated at 700 K obtained from Figure 5(e). The experimental data are taken from Refs. [47, 73, 118, 173].
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