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Review Article

High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective

Table 3

The nominal element contents used by different groups to synthesize Mg3Sb2-xBix alloys. The preparation method, Hall carrier concentration, and peak are also shown. The data are taken from Refs. [33, 47, 48, 7073, 80, 82, 8488, 92, 93, 115, 192, 194].

Nominal contentMethod (1019 cm-3)Reference
MgBiDopant

3.20.49TeBM+HP (Ar)21.5@700 K[70]
0.01
30.48TeAM+BM+SPS (Vac.)2.21.65@725 K[71]
0.04
3.070.48SeAM+BM+SPS (Vac.)0.911.23@725 K[84]
0.02
3.10.49TM&TeBM+HP3-4.41.5-1.7@773 K[72, 85]
0.1&0.01
3.20.49TeBM+HP2.0-3.51.4-1.5@773 K[192]
0.01
30.49SAM+BM+SPS (Vac.)0.5761.0@725 K[86]
0.01
3.020.49-0.89Mn&TeBM+SPS\1.5-1.6@773 K[80]
0.01&0.01
3.01-3.20.49TeBM+HP (Ar)2.8-3.51.2-1.4@600 K[87]
0.01
3.050.5LaBM+HP (Ar)51.0@600 K[114]
0.005
3.20.49SeBM+HP1.91.4@723 K[93]
0.01
3.150.49Mn&SeBM+HP2.11.7@623 K[93]
0.05&0.01
3.0321YMelting+cut+HP7.11.8@700 K[73]
0.018
3.0451ScMelting+cut+HP3.41.3@500 K[92]
0.005
3.051.39825-1.393TeBM+HP (Ar)2.3-61.0-1.2@400-500 K[47]
0.01
3.020.5YBM+HP3.61.8@773 K[88]
0.02
3.21.298-1.498TeBM+HP1.40.9@350 K[33]
0.002
3.50Sc&TePowder mix+SPS21.5@725 K[190]
0.03&0.04
3.010.49TeBM+HP (Ar)+Mg-vapor annealing2.80.8@300 K, 1.4@700 K[82]
0.01
>31.25YMg-flux1.60.82@315 K[48]
\

BM: ball milling; HP: hot pressing; AM: arc melting; SPS: spark plasma sintering; Vac.: vacuum; TM: transition metal.

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