Research / 2020 / Article / Fig 3

Research Article

Graphene/Semiconductor Heterostructure Wireless Energy Harvester through Hot Electron Excitation

Figure 3

The performance characterization of the graphene/GaAs heterojunction energy harvester with two wireless energy sources. (a) The relative position of emissions and device. (b) Voltage characteristic versus time of the device when switching the RF sources off and on forming an angle of 45° on the graphene/GaAs wireless generator. (c) Voltage characteristic versus time when switching the RF sources off and on forming an angle of 90° on the graphene/GaAs wireless generator. (d) Voltage characteristic versus time when switching the RF sources off and on forming an angle of 180° on the graphene/GaAs wireless generator.