Research / 2020 / Article / Fig 2

Review Article

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Figure 2

Anisotropic 2D materials and polarization-dependent Raman spectra. (a) Atomic structure of BP with puckered honeycomb configuration. (b) Characteristic Raman peaks of BP at high-frequency modes. Inset shows the B modes of BP at low wavenumbers. (c) Intensity map of periodic Raman signals of BP. (d) Atomic structure of few-layer GeSe with puckered honeycomb configuration. (e) Distorted 1T structure of ReS2 flake. (f) ANRS mapping data at 214 cm−1 peak with different polarization angles. (g) Atomic structure of ZrS3 flakes. The dotted black line represents the primitive monoclinic cell. The Raman peaks of ZrS3 obtained along the -axis (red plot) and -axis (green plot). (h) Top view of GaTe monolayer. Experimental Raman spectrum of thick GaTe flakes at room temperature. (i) Crystal structure and Raman signals of layered GaAs flakes. Panel (a) is reproduced with permission from Ref. [86], copyright 2020 Advanced Materials. Panel (b) is reproduced with permission from Ref. [90], copyright 2015 Nano Letters. Panel (c) is reproduced with permission from Ref. [92], copyright 2015 ACS Nano. Panel (d) is reproduced with permission from Ref. [99], copyright 2017 Journal of the American Chemical Society. Panel (e) is reproduced with permission from Ref. [104], copyright 2015 Nano Letters. Panel (f) is reproduced with permission from Ref. [105], copyright 2016 Nano Letters. Panel (g) is reproduced with permission from Ref. [35], copyright 2016 Nanoscale. Panel (h) is reproduced with permission from Ref. [108], copyright 2016 ACS Nano. Panel (i) is reproduced with permission from Ref. [96], copyright 2018 Advanced Functional Materials.
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