Research / 2020 / Article / Fig 2

Research Article

Interfacial Built-In Electric Field-Driven Direct Current Generator Based on Dynamic Silicon Homojunction

Figure 2

The physical mechanism based on dynamic homojunction under the built-in electric field. (a) The band diagram and electron transport process of the dynamic N-Si/N-Si homojunction generator. (b) The schematic diagram of the dynamic N-Si/N-Si homojunction generator with different Fermi levels. (c) The one-dimensional band alignment of the Fermi level of N-Si substrate with different resistivity of 0.01, 0.5, 5, 50, 1000, and 10000 Ω·cm. (d) The relationship between the voltage output and the Fermi level difference between two N-Si substrates. (e) The schematic diagram of the dynamic N-Si/N-Si homojunction generator with the same Fermi level. (f) The current response of dynamic N-Si/N-Si homojunction generator under the continuous movement mode with the same or different Fermi levels.