Research / 2020 / Article / Fig 4

Research Article

Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials

Figure 4

The -point is at or near the valence band maximum for compounds with both a group IV element on the -site (Sn or Ge) and a group IX on the -site (Co, Rh, or Ir). Furthermore, in six of the seven -pocket materials, the -point is converged within 100 meV of the band edge (total degeneracy of ten).