Research / 2020 / Article / Fig 2

Research Article

Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials

Figure 2

(a), (b) The symmetric devices made from and and marked as and , respectively. (c), (d) The - characteristic curves under different temperatures of and , respectively. The electrode temperatures are ranged from 50 to 300 K. The bias voltages are ranged from 0.00 to 0.40 V because the - curves under positive and negative bias are symmetric. Note that the current in two devices is in different orders of magnitudes due to disparate transmission mechanisms. (e), (f) The projected band structures of and , respectively. The sizes of the blue and orange dots represent the relative weights of 1T MoS2 and Janus MoSSe layers, respectively.
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