Research / 2020 / Article / Fig 4

Research Article

Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials

Figure 4

(a) The projected band structures of bilayer 1T MoS2-MoSTe with S-S (upper left) and S-Te (upper right) interfaces and 1T MoS2-MoSeTe with S-Se (lower left) and S-Te (lower right) interfaces. (b) The asymmetric Schottky barriers of Janus MoSSe, MoSTe, and MoSeTe contacting with metal 1T MoS2. The text above each volume indicates the contact interface, where each Janus material has two different contact interfaces. The tags and are p-type and n-type Schottky barrier differences between two interfaces.
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