Research / 2020 / Article / Fig 2

Research Article

Ultrafast Laser Writing Deep inside Silicon with THz-Repetition-Rate Trains of Pulses

Figure 2

Illustrations of main experimental processes. (a) Experimental setup for the generation of trains of ultrashort pulses and reconstruction 3D fluence distributions inside Si. (b, c) Temporal pulse shapes and associated polarization orientations before and after the crystals. (d) 3D laser fluence mapping in the focal region reconstructed from a succession of captured images applying a z-scan procedure along the laser propagation axis.