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Research Article

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Table 1

Electrical parameters of above devices annealed at 360°C and parameters of NdIZO-TFT from other literatures.

S/D electrode/ (cm2·V-1·s-1)SS (V·dec-1) (V)Notes

Al52.60.23-8.5This work
Cu40.80.10-1.1This work
CCZ40.30.120.83This work
ITO~10730.40.26-4.74Ref. [38]
ITO~1064.250.34-0.97Ref. [39]