Ultrafast electron diffraction on silicon. (a) Electron diffraction images of 35 nm single-crystalline silicon with a face-centered cubic structure. The data is collected by an MCP detector with 1 s exposure time. (b) The relative intensity changes of the 400 diffraction spots as a function of the time delay under the incident laser fluence of around 5 mJ/cm2 with compressed electron bunch (black square) and uncompressed electron bunch (blue triangle). Each fit represents a function of single exponential decay with a time constant of (red) and (green).