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Review Article

Two-Dimensional Pnictogen for Field-Effect Transistors

Wenhan Zhou1, Jiayi Chen2, Pengxiang Bai1, Shiying Guo1, Shengli Zhang1, Xiufeng Song1, Li Tao2, and Haibo Zeng1

1Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
2Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
Correspondence should be addressed to Shengli Zhang; zhangslvip@njust.edu.cn, Li Tao; tao@seu.edu.cn, and Haibo Zeng; zeng.haibo@njust.edu.cn

How to Cite this Article

Wenhan Zhou, Jiayi Chen, Pengxiang Bai, et al., “Two-Dimensional Pnictogen for Field-Effect Transistors,” Research, vol. 2019, Article ID 1046329, 21 pages, 2019. https://doi.org/10.34133/2019/1046329.

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