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Research Article

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors

Lei Tang 1, Changjiu Teng 1, Yuting Luo 1, Usman Khan 1, Haiyang Pan 2, Zhengyang Cai 1, Yue Zhao 2,3, Bilu Liu 1,*, and Hui-Ming Cheng 1,4,*

1 Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
2 Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
3 Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
4 Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
*Correspondence should be addressed to Bilu Liu; bilu.liu@sz.tsinghua.edu.cn and Hui-Ming Cheng; hmcheng@sz.tsinghua.edu.cn

How to Cite this Article

Lei Tang, Changjiu Teng, Yuting Luo, et al., “Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors,” Research, vol. 2019, Article ID 2763704, 10 pages, 2019. https://doi.org/10.1155/2019/2763704.

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