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Research Article

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors

Lei Tang1, Changjiu Teng1, Yuting Luo1, Usman Khan1, Haiyang Pan2, Zhengyang Cai1, Yue Zhao2,3, Bilu Liu1,*, and Hui-Ming Cheng1,4,*

1Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
2Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
3Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
4Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
*Correspondence should be addressed to Bilu Liu; bilu.liu@sz.tsinghua.edu.cn and Hui-Ming Cheng; hmcheng@sz.tsinghua.edu.cn

How to Cite this Article

Lei Tang, Changjiu Teng, Yuting Luo, et al., “Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors,” Research, vol. 2019, Article ID 2763704, 10 pages, 2019. https://doi.org/10.34133/2019/2763704.

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