Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Yanghua Lu; Sirui Feng; Runjiang Shen; Yujun Xu; Zhenzhen Hao; Yanfei Yan; Haonan Zheng; Xutao Yu; Qiuyue Gao; Panpan Zhang; Shisheng Lin

doi:10.34133/2019/5832382

Research Article

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Yanghua Lu¹, Sirui Feng¹, Runjiang Shen¹, Yujun Xu¹, Zhenzhen Hao¹, Yanfei Yan¹, Haonan Zheng¹, Xutao Yu¹, Qiuyue Gao¹, Panpan Zhang¹, and Shisheng Lin^1,2

¹College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

²State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China

Correspondence should be addressed to Shisheng Lin; shishenglin@zju.edu.cn

Volume: 2019Article ID: 5832382DOI: 10.34133/2019/5832382

Received: 22 October 2019Accepted: 1 November 2019Published: 15 November 2019

How to Cite this Article

Yanghua Lu, Sirui Feng, Runjiang Shen, et al., “Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport,” Research, vol. 2019, Article ID 5832382, 10 pages, 2019. https://doi.org/10.34133/2019/5832382.

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Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

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