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Figure 2: Floating gate memory based on 2D materials. (a) Schematics and (b) band alignments of programming and erasing processes of a floating-gate memory based on MoS2/graphene heterostructure. (c) Schematics and (d) Band alignments of programming and erasing processes of a two-terminal floating gate memory based on MoS2/h-BN/graphene heterostructure. (e) Schematics and (f) band alignments of programing and erasing processes of a semifloating gate memory. Reproduced with permissions: (a) and (b) from [36]; (c) and (d) from [37]; (e) and (f) from [28].