Alt text
Figure 3: Two-terminal RRAM devices based on 2D materials. (a) Schematic of the graphene/Mo / graphene device. (b) HRTEM images of at different temperatures. still maintains a well-defined crystal structure at 800°C. (c) I-V switching curves of the graphene/ /graphene device at different temperatures. (d) C-AFM test that reveals the formation of conductive filament in Au/Ti/ h-BN/Cu synapse. (e) and (f) Dynamic responses of Metal/ h-BN/ metal synapses with different programming methods. Reproduced with permissions: (a), (b), and (c) from [29]; (d), (e), and (f) from [39].