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Figure 7: (a) Schematic structure and (b) schematic band diagrams of switching mechanism in WSe2/h-BN ORAM. (c) 130 storage states obtained by applying a different number of 405 nm light pulse (duration of 0.5 s and intensity of 210 mW/cm2). The gate voltage is -80 V. Inset: integrated WSe2/h-BN pixel matrix for color image sensor with memory capability. Two-terminal ORAMs based on different heterostructures. (d) Schematics of ORAM with MoS2/h-BN/graphene heterostructures and illustration of programming, erasing and ON/OFF readout processes. (e) Schematics of ORAM with phosphorene/ZnO nanoparticles heterostructure and illustrations of the SET process with external bias and light illumination. (f) Schematic of MoS2/PbS infrared ORAM and band diagram of MoS2/PbS heterostructure upon the infrared laser illumination. Reprodued with permissions: (a), (b), and (c) from [46]; (d) from [47]; (e) from [48]; (f) from [49].